AlGaInN-Based Lasers Produced Using Etched Facet Technology

ABSTRACT

A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional under 35 U.S.C. 120 of copending U.S.patent application Ser. No. 11/455,636, filed Jun. 20, 2006, whichclaims the benefit of U.S. Provisional Patent Application No.60/692,583, filed Jun. 22, 2005, the disclosure of which is herebyincorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates, in general, to a process for fabricatinglasers capable of emitting blue light, and, more particularly, to thefabrication of AlGaInN-based lasers utilizing etched facet technology(EFT) for producing laser devices.

Reflective mirrors for edge-emitting semiconductor laser diodes aretypically formed at the ends of a laser cavity by mechanical cleaving ofa semiconductor crystal. In general, for any semiconductor material,cleaving is an imprecise process compared to photolithography. Inaddition, it necessitates the handling of fragile bars or minisculechips for device testing and other subsequent operations. It also tendsto be incompatible with monolithic integration because it requires thatthe wafer be physically broken to obtain fully functional lasers.

Cleaving of GaN is especially problematic. Nichia Chemical firstdemonstrated GaN-based blue lasers on sapphire substrates in 1995 andhas subsequently been able to produce commercially available CW lasers[S. Nakamura, et al. 2000 “The Blue Laser Diode: The Complete Story,”Springer-Verlag]. Cleaving is commonly used to form the facets of bluelasers, but the prices of these devices have remained very high.Cleaving the sapphire substrate to form the GaN-based laser facets isparticularly difficult, since sapphire has many cleave planes withapproximately equal cleave strength within a small angular distance ofeach other. Because of this, the fracture interface can easily beredirected from one cleavage plane to another, even when perturbationsduring the cleaving process are small, and when this occurs, the laseris unusable. Despite these problems, sapphire has been the substrate ofchoice for nitride growth because it is relatively inexpensive andstable during the high temperature processes required for GaNdeposition. However, both sapphire and the more expensive SiC substratesare significantly lattice mismatched to GaN, producing high defectdensities in the grown material. Free standing GaN substrates are apartial solution, and are just now becoming available, but unlike cubicInP and GaAs, GaN is hexagonal in crystal structure and much harder tocleave. It is therefore expected that cleaving will continue to be achallenging process even with GaN substrates. By using tilted substratesin CAIBE, vertical etched facet blue lasers have been fabricated[Kneissl et al., Appl. Phys. Lett. 72, 1539-1541]; however, these laserswere of the stripe or gain-guided kind. Accordingly, there is a need foran improved process for fabricating ridge-type blue lasers in a reliableand cost-effective manner.

A significant factor affecting the yield and cost of GaN-based bluelasers is the lack of availability of laser quality material with lowdefect density. A few research labs have developed techniques such asepitaxial lateral overgrowth (ELOG) on sapphire that have improved thedefect density to the 10⁵/cm² level. Because of the difficulty incleaving, described previously, the minimum cavity length that can berealistically fabricated today is on the order of 600 μm. The use ofetched facets in place of mechanically cleaved facets allows theformation of shorter cavity devices of 100 μm or less. The ability tomake shorter cavity devices results in a lower probability of havingdefects in the device and hence produces a much higher yield. Theselasers may have a lower maximum power rating than longer cavity devices;however, the vast majority of lasers will be used in next generation DVDread-only applications, where lower power is sufficient and the lowestcost and lowest power consumption will be needed. The specificfabrication, integration and full wafer testing capabilities enabled byEFT will also provide significant benefits to the fabrication ofhigh-power GaN lasers for writable optical disk applications.

BRIEF SUMMARY OF THE INVENTION

In view of the attractiveness of an etched-facet blue-emitting laserfrom a process yield and cost perspective, as well as its potential forthe fabrication of integrated AlGaInN-based photonics, a new EFT processhas been developed to achieve facet etching in AlGaInN-based structures.Several years ago, a new technology was pioneered [A. Behfar-Rad, et al.1989 Appl. Phys. Lett. 54, 439-495; U.S. Pat. No. 4,851,3682] in whichlaser facets were formed using a process based on photolithographydefinition of a mask and chemically assisted ion beam etching (CAIBE).BinOptics Corporation of Ithaca, N.Y., has developed commerciallyavailable InP-based laser products using this Etched Facet Technology(EFT). These products are characterized by precisely located mirrorsthat have a quality and reflectivity that are equivalent to thoseobtained by cleaving. With EFT, lasers are fabricated on the wafer inmuch the same way that integrated circuit chips are fabricated onsilicon. This allows the lasers to be monolithically integrated withother photonic devices on a single chip and to be tested inexpensivelyat the wafer level [P. Vettiger, et al. 1991 IEEE J. Quantum Electron.27, 1319-13314].

A novel and cost-effective way to build a surface-emitting laser usingetched facet technology is described in A. Behfar, et al, 2005 PhotonicsWest, pages 5737-08. See also co-pending U.S. patent application Ser.No. 10/958,069 of Alex A. Behfar, entitled “Surface Emitting andReceiving Photonic Devices”, filed Oct. 5, 2005 (Attys. Dkt. BIN 15);and co-pending U.S. patent application Ser. No. 10/963,739, entitled“Surface Emitting and Receiving Photonic Device With Lens,” filed Oct.14, 2004 (Attys. Dkt. BIN 19) of Alex A. Behfar, et al, both assigned tothe assignee of the present application, the disclosures of which arehereby incorporated herein by reference. The described horizontalcavity, surface-emitting laser (HCSEL) is in the form of an elongatedcavity on a substrate, and is fabricated by etching a 45° angled facetat the emitter end and a 90° facet at the back end of the cavity. Theback end reflective region may incorporate an etched distributed Braggreflector (DBR) adjacent to the rear facet, or dielectric coatings maybe used for facet reflectivity modification (FRM). A monitoringphotodetector (MPD) and receiver detectors may also be integrated ontothe chip, as described in co-pending U.S. patent application Ser. No.11/037,334, filed Jan. 19, 2005, of Alex A. Behfar, entitled “IntegratedPhotonic Devices (Attorney Docket BIN 17), assigned to the assignee ofthe present application.

In accordance with the present invention, lasers are fabricated on awafer in much the same way that integrated circuit chips are fabricatedon silicon, so that the chips are formed in full-wafer form. The lasermirrors are etched on the wafer using the EFT process, and theelectrical contacts for the lasers are fabricated. The lasers are testedon the wafer, and thereafter the wafer is singulated to separate thelasers for packaging. Scanning Electron Microscope images of etchedAlGaInN-based facets show the degree of verticality and smoothnessachieved using newly developed EFT process of the present invention. Thepresent invention allows lasers and integrated devices for a variety ofapplications with wavelength requirements accessible with AlGaInN-basedmaterials.

The process for fabricating lasers in accordance with the presentinvention may be summarized as comprising the steps of etching a waferhaving an AlGaInN-based structure to fabricate a multiplicity of laserwaveguide cavities on the wafer and then etching the laser cavities toform laser facets, or mirrors, on the ends of the waveguides while theyare still on the wafer. Thereafter, electrical contacts are formed onthe laser cavities, the individual lasers are tested on the wafer, andthe wafer is singulated to separate the lasers for packaging. Inaccordance with the invention, the method of etching the facets includesusing a high temperature stable mask on a p-doped cap layer of theAlGaInN-based laser waveguide structures on the wafer to define thelocations of the facets, with the mask maintaining the conductivity ofthe cap layer, and then etching the facets in the laser structurethrough the mask using a temperature over 500° C. and an ion beamvoltage in excess of 500V in CAIBE.

Selectivity between the etching of the semiconductor and the maskingmaterial is very important in obtaining straight surfaces for use inphotonics. High selectivity between the mask and the GaN based substratewas obtained, in accordance with the present invention, by performingCAIBE at high temperatures. Large ion beam voltages in CAIBE were alsofound to enhance the selectivity. The mask materials were chosen towithstand the high temperature etching, but also to prevent damage tothe p-contact of the GaN-based structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing, and additional objects, features and advantages of theinvention will become apparent to those of skill in the art from thefollowing detailed description of the invention taken with theaccompanying drawings, which are briefly described as follows.

FIG. 1 illustrates a prior art laser fabrication process, wherein laserfacets are cleaved.

FIG. 2 illustrates a prior art laser fabrication process with on-wafertesting made possible by etching of the laser facets.

FIG. 3 is a graph illustrating the effect of temperature in CAIBE atconstant ion beam current density and voltage on GaN etch rate and onthe selectivity of the etching of GaN to erosion of the SiO₂ mask.

FIG. 4 is a graph illustrating the effect of ion beam voltage in CAIBEat constant temperature and constant ion beam current density on GaNetch rate and on the selectivity of the etching of GaN to erosion of theSiO₂ mask.

FIG. 5 shows the angle of the GaN facet with respect to the normal tothe substrate with the different tilt angles used during CAIBE.

FIGS. 6-18 illustrate a process for fabrication of nitride-based ridgelasers with vertical facets using three etching steps in CAIBE, inaccordance with the present invention.

FIG. 19 illustrates in perspective view a horizontal cavity,surface-emitting laser (HCSEL), fabricated in accordance with the EFTprocess of the present invention.

FIG. 20 is a side view of the laser of FIG. 19.

FIG. 21 illustrates the integration of a HCSEL and receiver detectors ona single chip.

DETAILED DESCRIPTION OF THE INVENTION

As generally illustrated at 10 in FIG. 1, mechanical cleaving of asemiconductor epi wafer 12 is the usual process for defining reflectivemirrors, or facets, at the cavity ends of edge-emitting diode lasers. Inthis process, multiple waveguides 14 are fabricated on the wafersubstrate, a metal contact layer is applied, and the wafer ismechanically cleaved, as along cleave lines 16, to form bars 18 of laserdevices 20. The bars 18 are then stacked, as illustrated at 22, and thecleaved end facets of the laser devices are coated to provide thedesired reflection and emission characteristics. The individual laserdevices 20 may then be tested, as at 24, by applying a bias voltage 26across the individual lasers, and detecting the resulting output lightbeam 28. The bars of laser devices may then be separated, or singulated,as at 30, to produce individual chips 32 that may be suitably packaged,in known manner, as at 34.

For most semiconductor devices, however, the foregoing cleaving processis imprecise, for it relies on the location and angle of the crystallineplanes of the semiconductor material. With some materials, for example,there may be cleave planes of approximately equal strength that areoriented at such acute angles to one another that minute perturbationsoccurring during cleaving can redirect a fracture interface from onecleave plane to another. Furthermore, the cleaving process illustratedin FIG. 1 creates fragile bars and minuscule chips that are awkward tohandle during testing and packaging. In addition, mechanical cleavingtends to be incompatible with later processing of the individual chips,as would be needed to provide a monolithic integration of components ona chip, for example, since the wafer must physically be broken to obtainfully functional lasers.

An alternative prior art technology for fabricating photonic devicessuch as lasers is generally illustrated at 40 in FIG. 2, whereinmultiple waveguides 42 are fabricated on a suitable wafer substrate 44.These are preferably parallel waveguides that extend across the wafer,as illustrated. A process based on photolithography andchemically-assisted ion-beam etching (CAIBE) is then used to form facetsat desired locations along the waveguides to produce laser waveguidecavities. These facets are precisely located, and have a quality andreflectivity that is equivalent to those obtained by cleaving. Since thelaser cavities and facets are fabricated on the wafer much the same waythat integrated circuits are fabricated on silicon, this process allowsthe lasers to be monolithically integrated with other photonic deviceson a single chip, and allows the devices to be tested inexpensivelywhile still on the wafer, as indicated at 46. Thereafter, the wafer maybe singulated, as at 48, to separate the chips 50, and the chips maythen be packaged, as illustrated at 52. This process has a high yieldand low cost, and also allows the manufacture of lasers having veryshort cavities. The prior art fabrication process of FIG. 2 is describedin greater detail in “Monolithic AlGaAs—GaAs Single Quantum-Well RidgeLasers Fabricated with Dry-Etched Facets and Ridges”, A. Behfar-Rad andS. S. Wong, IEEE Journal of Quantum Electronics, Vol. 28, pp. 1227-1231,May 1992.

In accordance with the present invention, lasers are fabricatedutilizing the general process illustrated in FIG. 2, but on a wafer withan AlGaInN-based epitaxial structure 44, in much the same way thatintegrated circuit chips are fabricated on silicon, so that the chipsare formed in full-wafer form. The laser mirrors are etched on the waferusing the new etched facet technology EFT of the invention, and theelectrical contacts for the lasers are fabricated on the laser cavitieson the wafer. The lasers are tested on the wafer, and thereafter thewafer is singulated to separate the lasers for packaging, in the mannerdescribed above. Scanning Electron Microscope images of etchedAlGaInN-based facets show that a high degree of verticality andsmoothness can be achieved using the EFT process of the presentinvention. The present invention permits the fabrication of lasers andintegrated devices for a variety of applications having wavelengthrequirements accessible by AlGaInN-based materials.

As will be described in greater detail below, in the process of thepresent invention, a AlGaInN-based laser structure is epitaxiallydeposited on a substrate and contains a lower cladding of n-doped AlGaN,an active region with quantum wells and barriers of AlGaInN (Al and/orIn can be zero in this composition), an upper cladding layer of p-dopedAlGaN, and a highly p-doped cap layer of GaN and/or GaInN.

A layer of PECVD SiO₂ is deposited on the nitride-based laser structure.Lithography and RIE is performed to pattern the SiO₂ to provide an SiO₂mask that is used to define laser facets and laser mesas. For eachlaser, a ridge is formed, first by lithography and removal of SiO₂ inregions other than the location of the ridge through RIE, and thenthrough CAIBE, which is once again used to form the ridges. The samplesare encapsulated with PECVD SiO₂, a contact opening is formed, and ap-contact is formed on top of the wafer, followed by the n-contact onthe bottom.

In a preferred form of the process of the invention, the etching inCAIBE is carried out at a temperature of between about 500° C. and about700° C., and with an ion beam voltage of between 500 V and 2000 V toprovide improved selectivity. FIG. 3 illustrates at curve 60 the effecton the etch rate, or etch rate gain, of GaN with temperature in CAIBEwhile the ion beam voltage, beam current density, and the flow ofChlorine are kept constant at 1100 V, 0.35 mA/cm², and 20 sccm. Thisfigure also illustrates at curve 62 the etch selectivity between GaN andthe SiO₂, and shows that the selectivity improves with increasingtemperature with a selectivity of over 10:1 being obtained around 700°C. However, at temperatures of beyond 700° C., the GaN facet begins toexhibit a pitting behavior and this pitting is exacerbated at highertemperatures.

FIG. 4 illustrates at curve 64 the effect on the etch rate of GaN withbeam voltage in CAIBE while the temperature, ion beam current density,and the flow of Chlorine are kept constant at 275° C., 0.30 mA/cm², and20 sccm. This figure also illustrates at curve 66 the etch selectivitybetween GaN and the SiO₂, and shows that the selectivity improves withincreasing beam voltage.

Under CAIBE conditions where lower etch selectivity between GaN and theSiO₂ is obtained, the etched facet may be formed at an angle away fromthe perpendicular to the substrate, but this can be compensated for byetching at an angle in the CAIBE system. In this case, the sample ispositioned at an angle to the ion beam that is away from perpendicularincidence. Curve 70 in FIG. 5 shows the facet angle as a function of thetilt in the CAIBE sample holder stage. The conditions used forgenerating the data in FIG. 5 were an ion beam voltage of 1250 V; ioncurrent density of 0.3 mA/cm²; 20 sccm flow of Cl₂; and substrate stagetemperature of 700° C.

Turning now to a more detailed description of the process of theinvention, a Fabry-Perot laser waveguide 100, shown in perspective viewin FIG. 6, is fabricated using the process steps of FIGS. 7 to 18,wherein a process for fabricating a highly reliable AlGaInN-based bluelaser waveguide on a substrate 102 is illustrated. Although theinvention will be described in terms of a laser having a ridge such asthat illustrated in FIG. 6 at 104, it will be understood that othertypes of lasers or other photonic devices may also be fabricated usingthis process.

As is conventional, the substrate 102 may be a wafer formed, forexample, of a type III-V type compound, or an alloy thereof, which maybe suitably doped. As illustrated in FIGS. 7 and 8, which are views ofthe device of FIG. 6 taken in the direction of lines 7-7 and 8-8,respectively, a succession of layers 106 may be deposited on a topsurface 108 of the substrate 102, as by epitaxial deposition usingMetalorganic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy(MBE), for example. These layers may then be etched to form opticalwaveguides, such as the waveguides 42 illustrated in FIG. 2 or thewaveguide 100 illustrated in FIG. 6, that typically include an activeregion 112 and upper and lower cladding regions 114 and 116, asillustrated in FIGS. 7 and 8. It is noted that FIGS. 7, 9, 11, 13 and 15are end views taken in the direction of the arrows 7-7 of the waveguide100 of FIG. 6, while FIGS. 8, 10, 12, 14 and 16 are cross-sectionalviews of the waveguide 100 taken in the direction of arrows 8-8 of FIG.6.

In one example, the layers 106 of the AlGaInN-based semiconductor laserphotonic device 100 were epitaxially formed on an n-doped GaN substrate102, and contained a lower cladding region 116 of n-doped AlGaN, anactive region 112 with quantum wells and barriers of AlGaInN (Al and/orIn can be zero in this composition), an upper cladding layer 114 ofp-doped AlGaN, and a highly p-doped cap layer 118 of GaN and/or GaInN.The upper and lower cladding regions 114 and 116, respectively, of thephotonic structure had a lower index than the index of the active region112, while the GaN and/or GaInN cap layer 118 was provided to allowohmic contacts. Although this example is based on providing a blue laserdevice on a GaN substrate, it will be understood that these devices canbe formed on other substrates such as Sapphire, SiC or AN.

A layer 120 of a dielectric such as SiO₂ is deposited on thenitride-based laser structure, as by plasma enhanced chemical vapordeposition (PECVD), photolithography is used to define the position ofthe facets in a spun-on photoresist layer, and a CHF₃ reactive ion etch(RIE) is used to transfer the pattern in the photoresist into the SiO₂to produce a mask. The photoresist is removed with an oxygen plasma andthe sample is placed in a Cl₂-based chemically assisted ion beam etch(CAIBE) at an appropriate substrate tilt to allow the formation of afirst vertical facet 126, as shown in FIG. 8. The CAIBE parameters maybe as follows: 1250 eV Xe ions at a current density of 0.3 mA/cm², Cl₂flow rate of 20 sccm, and a substrate stage temperature of 650° C. Theetch is deep enough to form an adequate facet surface for the verticalwaveguide of the laser. The remaining SiO₂ mask 120 is removed usingbuffered HF, and a new layer 127 of PECVD SiO₂ is deposited on thenitride-based laser structure, covering the first etched vertical facet126. A second photolithography is used to define the position of asecond facet in a photoresist layer, and RIE is used to transfer thephotoresist pattern into the SiO₂. The photoresist is removed and thesample is placed in CAIBE at an appropriate substrate tilt to allow theformation of the second vertical facet 128, as shown in FIG. 10. As inthe case of the first etched facet, the etch for the second facet isdeep enough to form an adequate facet surface for the vertical waveguideof the laser. The first facet 126 is protected by the SiO₂ mask 127during the formation of the second facet.

The remaining SiO₂ mask 127 is removed and a new layer 129 of PECVD SiO₂is deposited on the nitride-based laser structure, covering the firstand second etched vertical facets. Photolithography is used to definethe position of the ridge 104 in photoresist and RIE is used to transferthe photoresist pattern into the SiO₂ layer 129. The photoresist isremoved, and the sample is placed in CAIBE with the substrateessentially perpendicular to the ion beam for the formation of theridge, as illustrated in FIGS. 11 and 12. The ridge 104 provides lateralwaveguiding for the blue laser structure.

The remaining SiO₂ mask 129 is removed and a new layer 130 of PECVD SiO₂is deposited to encapsulate the structure, as shown in FIGS. 13 and 14.Photolithography is used to define the position of an opening 132 on topof the ridge in the photoresist and RIE is used to partially transferthe hole in the photoresist into the SiO₂, as illustrated in FIGS. 15and 16 to form a mask. Residual SiO₂ is removed from the opening 132,using buffered HF, so that the highly doped surface of the contact layer118 of the nitride based laser structure is exposed. In this way, RIEdoes not damage the surface of the highly doped contact layer 118. Ap-contact 140 is deposited, using metallization lift-off pattern 134 asshown in FIGS. 15 and 16, to cover the opening 132, and an n-contact 142is either formed from the same side as the p-contact using metallizationlift-off, or in the case that the substrate is conducting, is depositedon the backside of the wafer, as shown in FIGS. 17 and 18. The edges 136of the lift-off pattern define the p-contact.

The p-contact may be formed in a two step process where a firstdeposition of a metal, such as 30 nm of Ni followed by 30 nm of Au, isdeposited over the opening is performed through metallization lift-off.The first deposition is annealed using a rapid thermal annealer (RTA) at550° C. in an O₂ ambient to form good contact with the nitride-basedstructure. Then a second deposition of a metal, such as 15 nm of Ti, 500nm of Pt, and 1000 nm of Au, is performed also through metallizationlift-off to provide better conductivity of the p-metal as well as toprovide a better base for wirebonding to the p-contact.

The process described with respect to FIGS. 7-10 can be replaced with anangled etch that results in one or both of the facets 126 and 128 beingetched at a 45° angle to form a surface emitting device or HCSEL 150,such as that illustrated in FIGS. 19-21. In these figures, the HCSELincorporates a single 45° angled facet 152, although both facets can beangled, if desired. As illustrated in FIG. 21, one or more receivingdetectors 154 can be integrated with the HCSEL 150.

A significant factor affecting the yield and cost of AlGaInN-based bluelasers is the lack of availability of laser quality material with lowdefect density. A few research labs have developed techniques such asepitaxial lateral overgrowth (ELOG) on sapphire while others havedeveloped GaN substrates that have improved the defect density to the10⁵/cm² level. Because of the difficulty in cleaving, describedpreviously, the minimum cavity length that can be realisticallyfabricated using that procedure is on the order of 600 μm. The use ofetched facets in place of mechanically cleaved facets allows theformation of shorter cavity devices of 100 μm or less, and this abilityto make shorter cavity devices results in the probability of havingfewer defects per device and hence much higher yield. These shorterlasers may have a lower maximum power rating than longer cavity devices;however, the vast majority of lasers will be used in next generation DVDread-only applications, where lower power is sufficient and the lowestcost and lowest power consumption will be needed. The specificfabrication, integration and full wafer testing capabilities enabled byEFT will also provide significant benefits to the fabrication ofhigh-power GaN lasers for writable optical disk applications.

Although the present invention has been illustrated in terms ofpreferred embodiments, it will be understood that variations andmodifications may be made without departing from the true spirit andscope thereof as set out in the following claims.

1. A method for fabricating a laser, comprising the steps of:epitaxially depositing an AlGaInN-based structure including an activeregion on a substrate; and dry etching using a system containing an ionbeam source generating an ion beam directed towards said substrate: afirst facet in said AlGaInN-based structure; a second facet in saidAlGaInN-based structure; and a ridge waveguide along a top surface ofsaid AlGaInN-based structure above said active region for providinglateral waveguiding for said laser, said ridge waveguide being locatedbetween said first and second facets, said first facet being formed atand extending across a first end of said AlGaInN-based structure andsaid ridge waveguide in a single plane at or around 90-degrees to saidsubstrate.
 2. The method of claim 1, wherein said dry etching isperformed using a Chemically Assisted Ion Beam Etching (CAIBE) system.3. The method of claim 1, wherein said second facet is at or around90-degrees to said substrate.
 4. The method of claim 1, wherein saidsecond facet is at or around 45-degrees to said substrate.
 5. The methodof claim 1, further comprising the step of forming a contact on saidp-doped cap layer.
 6. A method for fabricating a laser, comprising thesteps of: epitaxially depositing on a substrate an AlGaInN-basedstructure including an active region and a p-doped cap layer at a topsurface of said structure; dry etching a first facet in saidAlGaInN-based structure; dry etching a second facet in saidAlGaInN-based structure; dry etching a ridge waveguide along a topsurface of said AlGaInN-based structure above said active region forproviding lateral waveguiding for said laser, said ridge waveguide beinglocated between said first and second facets; depositing a dielectricabove said ridge waveguide and covering said p-doped cap layer; andforming an opening using both dry etching and wet etching in saiddielectric, exposing said p-doped cap layer.
 7. The method of claim 6,wherein said dry etching is performed using a Chemically Assisted IonBeam Etching (CAIBE) system.
 8. The method of claim 6, wherein thelength of the ridge waveguide between said first and second facets is100 μm or less.
 9. The method of claim 6, wherein said dielectriccompletely encapsulates said etched facets.
 10. The method of claim 6,further comprising forming a contact on said p-doped cap layer.
 11. Amethod of fabricating a photonic device, comprising the steps of:epitaxially depositing an AlGaInN-based structure including an activeregion on a substrate; dry etching a first facet in said AlGaInN-basedstructure; and dry etching a ridge waveguide along a top surface of saidAlGaInN-based structure above said active region for providing lateralwaveguiding, said first facet being formed at and extending across afirst end of said AlGaInN-based structure and said ridge waveguide in asingle plane at or around 90-degrees to said substrate.
 12. The methodof claim 11, further comprising the step of dry etching a second facetin said AlGaInN-based structure.
 13. The method of claim 12, whereinsaid second facet is at or around 90-degrees to said substrate.
 14. Themethod of claim 12, wherein said second facet is at or around 45-degreesto said substrate.
 15. The method of claim 14, wherein the distancebetween said first and second facets is 100 μm or less.
 16. A method offabricating a photonic device, comprising the steps of: epitaxiallydepositing on a substrate an AlGaInN-based structure including an activeregion and a p-doped cap layer at a top surface of said structure; dryetching a first facet in said AlGaInN-based structure; dry etching aridge waveguide along a top surface of said AlGaInN-based structureabove said active region for providing lateral waveguiding for saidlaser; depositing a dielectric above said ridge waveguide and coveringsaid p-doped cap layer; and forming an opening using both dry etchingand wet etching in said dielectric, exposing said p-doped cap layer. 17.The method of claim 16, wherein said dry etching is performed using aChemically Assisted Ion Beam Etching (CAIBE) system.
 18. The method ofclaim 16, wherein the length of the ridge waveguide between said firstand second facets is 100 μm or less.
 19. The method of claim 16, whereinsaid dielectric completely encapsulates said etched facets.
 20. Themethod of claim 16, further comprising the step of forming a contact onsaid p-doped cap layer.